Federal Register - March 29, 2021
Versione di testo Cosa è?Dateas è un sito indipendente non affiliato a entità governative. La fonte dei documenti PDF che pubblichiamo qui è l'entità governativa indicata in ciascuno di essi. Le versioni in testo sono trascrizioni che realizziamo per facilitare l'accesso e la ricerca di informazioni, ma possono contenere errori o non essere complete.
Source: Federal Register
Federal Register / Vol. 86, No. 58 / Monday, March 29, 2021 / Rules and Regulations e.2.c. Dynamic Mechanical Analysis glass transition temperature DMA Tg equal to or exceeding 505 K 232 C and having a resin or pitch, not specified by 1C008 or 1C009.b, and not being a phenolic resin;
Note 1: Metal or carbon coated fibrous or filamentary materials preforms or carbon fiber preforms, not impregnated with resin or pitch, are specified by fibrous or filamentary materials in 1C010.a, 1C010.b or 1C010.c.
Note 2: 1C010.e does not apply to:
a. Epoxy resin matrix impregnated carbon fibrous or filamentary materials prepregs for the repair of civil aircraft structures or laminates, having all of the following:
1. An area not exceeding 1 m2;
2. A length not exceeding 2.5 m; and 3. A width exceeding 15 mm;
b. Fully or partially resin-impregnated or pitch-impregnated mechanically chopped, milled or cut carbon fibrous or filamentary materials 25.0 mm or less in length when using a resin or pitch other than those specified by 1C008 or 1C009.b.
Technical Notes:
1. Carbon fiber preforms are an ordered arrangement of uncoated or coated fibers intended to constitute a framework of a part before the matrix is introduced to form a composite.
2. The Dynamic Mechanical Analysis glass transition temperature DMA Tg for materials controlled by 1C010.e is determined using the method described in ASTM D 7028 07, or equivalent national standard, on a dry test specimen. In the case of thermoset materials, degree of cure of a dry test specimen shall be a minimum of 90% as defined by ASTM E 2160 04 or equivalent national standard.
25. In supplement no. 1 to part 774, Category 2, ECCN 2A001 is revised to read as follows:
2A001 Anti-friction bearings, bearing systems and components, as follows, see List of Items Controlled.
License Requirements Reason for Control: NS, MT, AT
Controls NS applies to entire entry.
Country Chart See Supp. No. 1 to part 738
NS Column 2
Controls MT applies to radial ball bearings having all tolerances specified in accordance with ISO 492
Tolerance Class 2
or ANSI/ABMA Std 20 Tolerance Class ABEC9, or other national equivalents or better and having all the following characteristics: an inner ring bore diameter between 12 and 50
mm; an outer ring outside diameter between 25 and 100 mm; and a width between 10
and 20 mm.
AT applies to entire entry.
Country Chart See Supp. No. 1 to part 738
MT Column 1
Controls NS applies to entire entry.
AT applies to entire entry.
AT Column 1
List Based License Exceptions See Part 740
for a Description of All License Exceptions LVS: $3000, N/A for MT
GBS: Yes, for 2A001.a, N/A for MT
List of Items Controlled Related Controls: 1 See also 2A991. 2
Quiet running bearings are subject to the ITAR see 22 CFR parts 120 through 130.
Related Definitions: Annular Bearing Engineers Committee ABEC.
Items:
Note: 2A001.a includes ball bearing and roller elements specially designed for the items specified therein.
a. Ball bearings and solid roller bearings, having all tolerances specified by the manufacturer in accordance with ISO 492
Tolerance Class 4 or Class 2 or national equivalents, or better, and having both rings and rolling elements, made from monel or beryllium;
Note: 2A001.a does not control tapered roller bearings.
Technical Notes:
1. Ringannular part of a radial rolling bearing incorporating one or more raceways ISO 5593:1997.
2. Rolling elementball or roller which rolls between raceways ISO 5593:1997.
b. Reserved c. Active magnetic bearing systems using any of the following, and specially designed components therefor:
c.1. Materials with flux densities of 2.0 T
or greater and yield strengths greater than 414 MPa;
c.2. All-electromagnetic 3D homopolar bias designs for actuators; or c.3. High temperature 450 K 177C and above position sensors.
26. In supplement no. 1 to part 774, Category 3, ECCN 3B001 is revised to read as follows:
18:05 Mar 26, 2021
Jkt 253001
PO 00000
Frm 00015
Fmt 4701
3B001 Equipment for the manufacturing of semiconductor devices or materials, as follows see List of Items Controlled and specially designed components and accessories therefor.
License Requirements Reason for Control: NS, AT
VerDate Sep<11>2014
16495
Sfmt 4700
Country Chart See Supp. No. 1 to part 738
NS Column 2
AT Column 1
List Based License Exceptions See Part 740
for a Description of All License Exceptions LVS: $500
GBS: Yes, except a.3 molecular beam epitaxial growth equipment using gas sources, .e automatic loading multichamber central wafer handling systems only if connected to equipment controlled by 3B001. a.3, or .f, and .f lithography equipment.
List of Items Controlled Related Controls: See also 3B991.
Related Definitions: N/A
Items:
a. Equipment designed for epitaxial growth as follows:
a.1. Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than 2.5% across a distance of 75 mm or more;
Note: 3B001.a.1 includes atomic layer epitaxy ALE equipment.
a.2. Metal Organic Chemical Vapor Deposition MOCVD reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminum, gallium, indium, arsenic, phosphorus, antimony, or nitrogen;
a.3. Molecular beam epitaxial growth equipment using gas or solid sources;
b. Equipment designed for ion implantation and having any of the following:
b.1. Reserved b.2. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium, or helium implant;
b.3. Direct write capability;
b.4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material substrate; or b.5. Being designed and optimized to operate at beam energy of 20keV or more and a beam current of 10mA or more for silicon implant into a semiconductor material substrate heated to 600 C or greater;
c. Reserved d. Reserved e. Automatic loading multi-chamber central wafer handling systems having all of the following:
e.1. Interfaces for wafer input and output, to which more than two functionally different semiconductor process tools controlled by 3B001.a.1, 3B001.a.2, 3B001.a.3
or 3B001.b are designed to be connected; and
E:FRFM29MRR3.SGM
29MRR3