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Federal Register / Vol. 86, No. 58 / Monday, March 29, 2021 / Rules and Regulations
equipment is determined by the control status of the other equipment.
d.1.a. Individual single transverse mode semiconductor lasers having any of the following:
d.1.a.1. Wavelength equal to or less than 1,510 nm and average or CW output power, exceeding 1.5 W; or d.1.a.2. Wavelength greater than 1,510 nm and average or CW output power, exceeding 500 mW;
d.1.b. Individual multiple-transverse mode semiconductor lasers having any of the following:
d.1.b.1. Wavelength of less than 1,400 nm and average or CW output power, exceeding 15 W;
d.1.b.2. Wavelength equal to or greater than 1,400 nm and less than 1,900 nm and average or CW output power, exceeding 2.5 W; or d.1.b.3. Wavelength equal to or greater than 1,900 nm and average or CW output power, exceeding 1 W;
d.1.c. Individual semiconductor laser bars having any of the following:
d.1.c.1. Wavelength of less than 1,400 nm and average or CW output power, exceeding 100 W;
d.1.c.2. Wavelength equal to or greater than 1,400 nm and less than 1,900 nm and average or CW output power, exceeding 25 W; or d.1.c.3. Wavelength equal to or greater than 1,900 nm and average or CW output power, exceeding 10 W;
d.1.d. Semiconductor laser stacked arrays two dimensional arrays having any of the following:
d.1.d.1. Wavelength less than 1,400 nm and having any of the following:
d.1.d.1.a. Average or CW total output power less than 3 kW and having average or CW output power density greater than 500
W/cm2;
d.1.d.1.b. Average or CW total output power equal to or exceeding 3 kW but less than or equal to 5 kW, and having average or CW output power density greater than 350W/cm2;
d.1.d.1.c. Average or CW total output power exceeding 5 kW;
d.1.d.1.d. Peak pulsed power density exceeding 2,500 W/cm2; or Note: 6A005.d.1.d.1.d does not apply to epitaxially-fabricated monolithic devices.
d.1.d.1.e. Spatially coherent average or CW
total output power, greater than 150 W;
d.1.d.2. Wavelength greater than or equal to 1,400 nm but less than 1,900 nm, and having any of the following:
d.1.d.2.a. Average or CW total output power less than 250 W and average or CW
output power density greater than 150 W/
cm2;
d.1.d.2.b. Average or CW total output power equal to or exceeding 250 W but less than or equal to 500 W, and having average or CW output power density greater than 50W/cm2;
d.1.d.2.c. Average or CW total output power exceeding 500 W;
d.1.d.2.d. Peak pulsed power density exceeding 500 W/cm2; or Note: 6A005.d.1.d.2.d does not apply to epitaxially-fabricated monolithic devices.
d.1.d.2.e. Spatially coherent average or CW
total output power, exceeding 15 W;

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d.1.d.3. Wavelength greater than or equal to 1,900 nm and having any of the following:
d.1.d.3.a. Average or CW output power density greater than 50 W/cm2;
d.1.d.3.b. Average or CW output power greater than 10 W; or d.1.d.3.c. Spatially coherent average or CW
total output power, exceeding 1.5 W; or d.1.d.4. At least one laser bar specified by 6A005.d.1.c;
Technical Note: For the purposes of 6A005.d.1.d, power density means the total laser output power divided by the emitter surface area of the stacked array.
d.1.e. Semiconductor laser stacked arrays, other than those specified by 6.A005.d.1.d., having all of the following:
d.1.e.1. Specially designed or modified to be combined with other stacked arrays to form a larger stacked array; and d.1.e.2. Integrated connections, common for both electronics and cooling;
Note 1: Stacked arrays, formed by combining semiconductor laser stacked arrays specified by 6A005.d.1.e, that are not designed to be further combined or modified are specified by 6A005.d.1.d.
Note 2: Stacked arrays, formed by combining semiconductor laser stacked arrays specified by 6A005.d.1.e, that are designed to be further combined or modified are specified by 6A005.d.1.e.
Note 3: 6A005.d.1.e does not apply to modular assemblies of single bars designed to be fabricated into end to end stacked linear arrays.
Technical Notes:
1. Semiconductor lasers are commonly called laser diodes.
2. A bar also called a semiconductor laser bar, a laser diode bar or diode bar consists of multiple semiconductor lasers in a one dimensional array.
3. A stacked array consists of multiple bars forming a two dimensional array of semiconductor lasers.
d.2. Carbon monoxide CO lasers having any of the following:
d.2.a. Output energy exceeding 2 J per pulse and peak power exceeding 5 kW; or d.2.b. Average or CW output power, exceeding 5 kW;
d.3. Carbon dioxide CO2 lasers having any of the following:
d.3.a. CW output power exceeding 15 kW;
d.3.b. Pulsed output with pulse duration exceeding 10 ms and any of the following:
d.3.b.1. Average output power exceeding 10 kW; or d.3.b.2. Peak power exceeding 100 kW;
or d.3.c. Pulsed output with a pulse duration equal to or less than 10 ms and any of the following:
d.3.c.1. Pulse energy exceeding 5 J per pulse; or d.3.c.2. Average output power exceeding 2.5 kW;
d.4. Excimer lasers having any of the following:
d.4.a. Output wavelength not exceeding 150 nm and any of the following:
d.4.a.1. Output energy exceeding 50 mJ per pulse; or
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d.4.a.2. Average output power exceeding 1 W;
d.4.b. Output wavelength exceeding 150
nm but not exceeding 190 nm and any of the following:
d.4.b.1. Output energy exceeding 1.5 J per pulse; or d.4.b.2. Average output power exceeding 120 W;
d.4.c. Output wavelength exceeding 190
nm but not exceeding 360 nm and any of the following:
d.4.c.1. Output energy exceeding 10 J per pulse; or d.4.c.2. Average output power exceeding 500 W; or d.4.d. Output wavelength exceeding 360
nm and any of the following:
d.4.d.1. Output energy exceeding 1.5 J per pulse; or d.4.d.2. Average output power exceeding 30 W;
Note: For excimer lasers specially designed for lithography equipment, see 3B001.
d.5. Chemical lasers as follows:
d.5.a. Hydrogen Fluoride HF lasers;
d.5.b. Deuterium Fluoride DF lasers;
d.5.c. Transfer lasers as follows:
d.5.c.1. Oxygen Iodine O2-I lasers;
d.5.c.2. Deuterium Fluoride-Carbon dioxide DF-CO2 lasers;
Technical Note: Transfer lasers are lasers in which the lasing species are excited through the transfer of energy by collision of a non-lasing atom or molecule with a lasing atom or molecule species.
d.6. Non-repetitive pulsed Neodymium Nd glass lasers having any of the following:
d.6.a. A pulse duration not exceeding 1
ms and output energy exceeding 50 J per pulse; or d.6.b. A pulse duration exceeding 1 ms and output energy exceeding 100 J per pulse;
e. Components as follows:
e.1. Mirrors cooled either by active cooling or by heat pipe cooling;
Technical Note: Active cooling is a cooling technique for optical components using flowing fluids within the subsurface nominally less than 1 mm below the optical surface of the optical component to remove heat from the optic.
e.2. Optical mirrors or transmissive or partially transmissive optical or electrooptical-components, other than fused tapered fiber combiners and Multi-Layer Dielectric gratings MLDs, specially designed for use with controlled lasers;
Note to 6A005.e.2: Fiber combiners and MLDs are specified by 6A005.e.3.
e.3. Fiber laser components as follows:
e.3.a. Multimode to multimode fused tapered fiber combiners having all of the following:
e.3.a.1. An insertion loss better less than or equal to 0.3 dB maintained at a rated total average or CW output power excluding output power transmitted through the single mode core if present exceeding 1,000 W; and e.3.a.2. Number of input fibers equal to or greater than 3;

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